| PART |
Description |
Maker |
| MRFG35010MT1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
| MRFG35002N6T1 |
GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
Freescale Semiconductor, Inc
|
| MGR2018CT_D ON1880 MGR2018CT |
Power Manager Gallium Arsenide Power Rectifier
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 20 AMPERES 180 VOLTS
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| MGR1018_D ON1879 MGR1018 |
Power Manager Gallium Arsenide Power Rectifier
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 10 AMPERES 180 VOLTS
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| DGSK32-018CS DGS15-018CS |
Gallium Arsenide Schottky Rectifier Second generation
Gallium Arsenide Schottky Rectifier Second generation 24 A, 180 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-252AA
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| KPC3023 KPC3020 KPC3021 KPC3022 |
(KPC3020 - KPC3023) Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting)
Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) 光耦合器（这是一镓砷化物红外线发射光耦cosist
|
Kondenshi Corp
KODENSHI[KODENSHI KOREA CORP.]
KODENSHI, CORP.
|
| WP710A10YD5V |
The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode.
|
Kingbright Corporation
|
| ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TR |
0.5-12 GHz General Purpose Gallium Arsenide FET
0.5?12 GHz General Purpose Gallium Arsenide FET
0.512 GHz General Purpose Gallium Arsenide FET
|
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| DGSK40-025CS DGS19-025CS |
31 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB PLASTIC PACKAGE-4
31 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-252AA PLASTIC PACKAGE-4
|
IXYS, Corp.
|
| GN01021 |
Gallium Arsenide Devices
|
Panasonic
|
